丝印：10；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：10；Package：178M10CP；Three-Terminal Regulator

STRUTURE : Silicon Monolithic Intergrated Circuit TYPE : Three-Terminal Regulator FEATURES : Output current up to 0.5A

文件：359.61 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：10；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES • For surface mounted application • Silicon epitaxial planar diode • Ultra small surface mount package • Low leakage current • 2 tolerance device of Vz • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：427.4 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：10；Package：SC-89；PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：385.86 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：TO-236AB；500 mA, 50 V NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features ■ 500 mA output current capability ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ ± 10 resistor ratio tole

文件：2.53807 Mbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

1.1 General description NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications Table 1. Pr

文件：912.36 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：SOT1216；20 V, complementary N/P-channel Trench MOSFET

1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very low threshold

文件：794.67 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：SOT1216；20 V, dual P-channel Trench MOSFET

1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultr

文件：732.4 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：SOT1215；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thi

文件：734.15 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10；Package：SOT1215；12 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD

文件：741.2 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司