0.5A, 600V N-CHANNEL POWER MOSFET

The UTC 05N60-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, • RDS(ON) <23Ω @ VGS = 10V, ID = 0.25A \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)

Features 600V, 5A, Low VCE(sat) Trench-Gate Field-Stop technology Optimized for conduction Robust RoHS compliant* Applications Switch-Mode Power Supplies (SMPS) Uninterruptible Power Sources (UPS) Power Factor Correction (PFC)

文件：1.48522 Mbytes 页数：10 Pages

BOURNS

伯恩斯

N-Channel Power MOSFET

文件：823.62 Kbytes 页数：4 Pages

JIANGSU

长电科技

N -Channel P ower MOSFET

文件：603.14 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品