丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：213.7 Kbytes 页数：12 Pages

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丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：225.11 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0110；Package：SOD882D；Unidirectional ESD protection diode

1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and sol

文件：871.6 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0110；Package：SOD882D；Bidirectional ESD protection diode

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with side-wettable fla

文件：264.73 Kbytes 页数：12 Pages

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丝印：0110；Package：DFN1006D-2；Bidirectional ESD protection diode

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with side-wettable fla

文件：265.64 Kbytes 页数：12 Pages

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丝印：0110；Package：SOT883B；60 V, 600 mA PNP switching transistor

1. General description PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AMB 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60V) • Leadless ultra small SMD plastic package

文件：224.55 Kbytes 页数：13 Pages

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丝印：0110；Package：SOD882D；Voltage regulator diode

文件：168.78 Kbytes 页数：10 Pages

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丝印：0110；Package：SOD882D；Voltage regulator diode

文件：169.17 Kbytes 页数：10 Pages

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丝印：011011；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：3.67582 Mbytes 页数：23 Pages

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丝印：011011；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

文件：3.67584 Mbytes 页数：23 Pages

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