PDTD143EQA

Marking：011001；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built

PDTD143EQA

Marking：011001；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD143XQA

Marking：011001；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PMBT2222AMB

Marking：01100111；Package：DFN1006B-3；40 V, 600 mA NPN switching transistor

1.Generaldescription NPNswitchingtransistorinanultrasmallDFN1006B-3(SOT883B)leadlessSurface-Mounted Device(SMD)plasticpackage. PNPcomplement:PMBT2907AMB 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.40V) •LeadlessultrasmallSMDplasticpacka

PDTB114EQA

Marking：011011；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

PDTD143XQA

Marking：011001；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

PMDXB550UNE

Marking：011000；Package：DFN1010B-6；30 V, dual N-channel Trench MOSFET

PMEG4015EPK

Marking：01100000；Package：DFN1608D-2；40 V, 1.5 A low VF MEGA Schottky barrier rectifier

PMXB65UPE

Marking：011000；Package：DFN1010D-3；12 V, P-channel Trench MOSFET