丝印：011；Package：TSOT23；700V AC/DC Buck Regulator with Ultra-Low Standby Power

▪ Ultra-low standby power (

文件：2.55015 Mbytes 页数：26 Pages

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丝印：011；Package：TSOT23；700V AC/DC Buck Regulator with Ultra-Low Standby Power

▪ Ultra-low standby power (

文件：2.55015 Mbytes 页数：26 Pages

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丝印：011AI；Package：VFQFN；Low Skew, 1-to-2, Differential-to-CML Fanout Buffer

Features • Two differential CML output pairs • IN, nIN pair can accept the following differential input levels: LVPECL, LVDS, CML • Maximum output frequency: 3.2GHz • Output skew: 5ps (typical) • Part-to-part skew: 100ps (maximum) • Additive phase jitter, RMS: 0.059ps (typical) • Propagati

文件：605.65 Kbytes 页数：15 Pages

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瑞萨

丝印：011AI；Package：VFQFN；Low Skew, 1-to-2, Differential-to-CML Fanout Buffer

Features • Two differential CML output pairs • IN, nIN pair can accept the following differential input levels: LVPECL, LVDS, CML • Maximum output frequency: 3.2GHz • Output skew: 5ps (typical) • Part-to-part skew: 100ps (maximum) • Additive phase jitter, RMS: 0.059ps (typical) • Propagati

文件：605.65 Kbytes 页数：15 Pages

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丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：213.7 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：225.11 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04643 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：011N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：838.2 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：985.64 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：011N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Ideal for high frequency switching and sync. rec.

文件：1.34933 Mbytes 页数：11 Pages

Infineon

英飞凌