丝印：0101；Package：SOD882D；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

文件：1.35473 Mbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0101；Package：SOT883B；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast

文件：717.13 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0101；Package：SOT883B；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast

文件：713.34 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

文件：677.99 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：010100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

文件：898.75 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：3.67582 Mbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

文件：3.67584 Mbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：010111；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：3.67582 Mbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：010111；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

文件：3.67584 Mbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：010110；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 500 mA output current capability ■ Reduced pick and place costs ■ Built

文件：2.34774 Mbytes 页数：24 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司