140V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -140V • BVECO > -7V • IC = -1A Continuous Collector Current • VCE(sat)

文件：476.07 Kbytes 页数：7 Pages

DIODES

美台半导体

140V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -140V • BVECO > -7V • IC = -1A Continuous Collector Current • VCE(sat)

文件：476.07 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP, 140V, 1A, SOT23

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. BVCEO > -140V\nBVECO > -7V\nIC = -1A Continuous Collector Current\nVCE(SAT) < -260mV @ -1A\nRCE(SAT) = 180mΩ\nHigh Power Dissipation SOT23\n180V Forward Blocking Voltage\nLow Saturation Voltage;

Diodes

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 1A SOT23-3

DIODES

美台半导体