140V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -140V • BVECO > -7V • IC = -1A Continuous Collector Current • VCE(sat)

文件：476.07 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 1A SOT23-3

DIODES

美台半导体

140V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：394.88 Kbytes 页数：6 Pages

DIODES

美台半导体

140V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：388.02 Kbytes 页数：6 Pages

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