PNP, 100V, 1A, SOT23

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. •BVCEO > -100V\n•VCE(SAT) < -220mV @ -1A\n•7V Reverse Blocking Voltage\n•Complementary Part Number ZXTN25100CFH\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•PPAP Capable (Note 4);

Diodes

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：SS LOW SAT TRANSISTOR SOT23 T\u0026R

PAM

龙鼎微

100V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

文件：450.21 Kbytes 页数：8 Pages

Zetex

100V, SOT23, PNP medium power transistor

Features • BVCEO > -100V • Maximum Continuous Collector Current IC = -1A • VCE(sat)

文件：462.81 Kbytes 页数：8 Pages

DIODES

美台半导体

100V PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissi

文件：398.04 Kbytes 页数：8 Pages

Zetex