DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 40mΩ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

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ZETEX

DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 40mΩ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件：270.93 Kbytes 页数：6 Pages

DIODES

美台半导体

Fast Switching

文件：67.86 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：694.33 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：607.28 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体