丝印：ZXT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：ZXTR2012；Package：TO252-3L；REGULATOR TRANSISTOR

文件：383.95 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：1N5；Package：SOT-23；15V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：412.59 Kbytes 页数：6 Pages

Zetex

丝印：1N5；Package：SOT-23；15V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：422.75 Kbytes 页数：6 Pages

DIODES

美台半导体

75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 5 amps continuous current • Up to 10 amps peak current • Low equivalent

文件：136.48 Kbytes 页数：6 Pages

Zetex

75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

Features • BVCEO > 75V • IC = 5A high Continuous Collector Current • Up to 10A Peak Current • RSAT = 70mΩ for a low equivalent On-Resistance • Low Saturation Voltage • hFE specified up to 10A for a high gain hold up • Lead-Free Finish; RoHS compliant (Note 1 & 2) • Halogen and Antimony

文件：146.52 Kbytes 页数：6 Pages

DIODES

美台半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 75V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.46V(Max) @IC=5A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：302.89 Kbytes 页数：3 Pages

ISC

无锡固电

75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 5 amps continuous current • Up to 10 amps peak current • Low equivalent

文件：136.48 Kbytes 页数：6 Pages

Zetex

75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

Features • BVCEO > 75V • IC = 5A high Continuous Collector Current • Up to 10A Peak Current • RSAT = 70mΩ for a low equivalent On-Resistance • Low Saturation Voltage • hFE specified up to 10A for a high gain hold up • Lead-Free Finish; RoHS compliant (Note 1 & 2) • Halogen and Antimony

文件：146.52 Kbytes 页数：6 Pages

DIODES

美台半导体

15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件：229.9 Kbytes 页数：6 Pages

Zetex