TCR2EE15

Marking：1N5；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TCR2EF15

Marking：1N5；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TCR5BM15A

Marking：1N5；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1.Description TheTCR5BMseriesareCMOSsingle-outputvoltageregulatorswithanon/offcontrolinput,featuringultralowdropoutvoltage,highPSRR,lowinrushcurrentandfastloadtransientresponse. Adifferentiatingfeatureistheuseofasecondarybiasrailasareferencevoltagethat

TLV9061QDCKRQ1

Marking：1N5；Package：SC70；TLV906xS-Q1 Automotive 10-MHz, RRIO, CMOS Operational Amplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061QDCKRQ1

Marking：1N5；Package：SC70；TLV906xS-Q1 Automotive 10-MHz, RRIO, CMOS Operational Amplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061QDCKRQ1

Marking：1N5；Package：SC70；TLV906xS-Q1 Automotive 10-MHz, RRIO, CMOS Operational Amplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

ZXT11N15DF

Marking：1N5；Package：SOT-23；15V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES •ExtremelyLowEquival

ZXT11N15DF

Marking：1N5；Package：SOT-23；15V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES •ExtremelyLowEquival

1N5333B

Marking：1N5333B；Package：DO-15；5W Zener Doides

Features Zenervoltage:3.3V~200V Highreliability Hightemperaturesolderingguaranteed: 260°C/10seconds,0.375”(9.5mm)leadlength MechanicalData Case:MoldedplasticDO-15 Terminals:Solderplated,solderableperMIL-STD-750,Method2026 Polarity:Colorbanddenot

1N5334B

Marking：1N5334B；Package：DO-15；5W Zener Doides

Features Zenervoltage:3.3V~200V Highreliability Hightemperaturesolderingguaranteed: 260°C/10seconds,0.375”(9.5mm)leadlength MechanicalData Case:MoldedplasticDO-15 Terminals:Solderplated,solderableperMIL-STD-750,Method2026 Polarity:Colorbanddenot