丝印：1N60；Package：SOT-89；N-Channel Power MOSFET

文件：294.84 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：1N60；Package：SOT-223；N-Channel MOSFET

文件：1.553 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：1N60KR；Package：SOT-223；MOSFET

Features - Low reverse transfer capacitances. - ESD improved capability. - Fast switching. - Low gate charge.

文件：648.86 Kbytes 页数：7 Pages

COMCHIP

典琦

Fast Switching

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 1A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 8Ω (Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requireme

文件：110.55 Kbytes 页数：2 Pages

ISC

无锡固电

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ◇ Metal silicon junction majority carrier conduction ◇ High current capability,low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satisfactory wave detection efficiency ◇ F

文件：274.64 Kbytes 页数：2 Pages

DSK

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

文件：454.91 Kbytes 页数：3 Pages

GXELECTRONICS

星合电子

Hermetically Sealed Glass Case Point Contact Germanium Diode

PRODUCT FEATURE 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

文件：3.55111 Mbytes 页数：2 Pages

THINKISEMI

思祁半导体

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

文件：71.1 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

文件：197.55 Kbytes 页数：4 Pages

Littelfuse

力特

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

文件：80.99 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体