CMS01N60Y-HF资料datasheet下载批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CMS01N60Y-HF	文件：648.86 Kbytes Page：7 Pages	丝印：1N60KR；Package：SOT-223；MOSFET Features - Low reverse transfer capacitances. - ESD improved capability. - Fast switching. - Low gate charge. 文件：648.86 Kbytes 页数：7 Pages	COMCHIP 典琦	COMCHIP
CMS01N60Y-HF	文件：300 bytes Page：1 Pages	MOSFET	Comchip 典琦	Comchip
CMT01N60	文件：259.17 Kbytes Page：8 Pages	POWER FIELD EFFECT TRANSISTOR 文件：259.17 Kbytes 页数：8 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
CMT01N60	文件：288.4 Kbytes Page：8 Pages	POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 页数：8 Pages	CHAMP 虹冠电子	CHAMP
CMT01N60	文件：189.23 Kbytes Page：7 Pages	POWER FIELD EFFECT TRANSISTOR 文件：189.23 Kbytes 页数：7 Pages	CHAMP 虹冠电子	CHAMP

更多CMS01N60Y-HF供应商更新时间2026-1-30 11:06:00