60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Continuous Current Rating  Totally Lead-Free &

文件：568.63 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：6005DN8；Package：SO-8；60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

Features  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  High Continuous Current Rating  Totally Lead-Free &

文件：568.63 Kbytes 页数：8 Pages

DIODES

美台半导体

intellifet

The ZXMS6005DN8Q is a dual self-protected low side IntelliFET MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DN8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrolle Low Input Current\nLogic Level Input (3.3V and 5V)\nShort Circuit Protection with Auto Restart\nOvervoltage Protection (Active Clamp)\nThermal Shutdown with Auto Restart\nOvercurrent Protection\nInput Protection (ESD)\nHigh Continuous Current Rating;

Diodes

美台半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 8SOIC

DIODES

美台半导体