20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=20V; RDS(ON)= 0.1V; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management

文件：186.35 Kbytes 页数：7 Pages

Zetex

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=20V; RDS(ON)= 0.1V; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management

文件：192.49 Kbytes 页数：7 Pages

DIODES

美台半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：483.3 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：745.52 Kbytes 页数：7 Pages

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：183.23 Kbytes 页数：7 Pages

Zetex