SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS ZUMT807-25 - T8 ZUMT807-40 - T24 COMPLEMENTARY TYPES ZUMT807-25 - ZUMT817-25 ZUMT807-40 - ZUMT817-40

文件：29.06 Kbytes 页数：1 Pages

DIODES

美台半导体

SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS ZUMT807-25 - T8 ZUMT807-40 - T24 COMPLEMENTARY TYPES ZUMT807-25 - ZUMT817-25 ZUMT807-40 - ZUMT817-40

文件：29.06 Kbytes 页数：1 Pages

DIODES

美台半导体

丝印：T24；Package：SOT-323；SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS ZUMT807-25 - T8 ZUMT807-40 - T24 COMPLEMENTARY TYPES ZUMT807-25 - ZUMT817-25 ZUMT807-40 - ZUMT817-40

文件：29.06 Kbytes 页数：1 Pages

DIODES

美台半导体

POWER TRANSISTORS(8.0A,150-200V,60W)

文件：110.55 Kbytes 页数：3 Pages

MOSPEC

统懋

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨