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FDS9926A

DualN-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription TheseN-Channel2.5VspecifiedMOSFETsuseFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–10V). Features •6.5A,20V.RDS(ON)=0.030Ω@VGS=4.5V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS9926A-NL

DualN-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FDW9926A

DualN-Channel2.5VSpecifiedPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDW9926A

DualN-Channel2.5VSpecifiedPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDW9926NZ

CommonDrainN-Channel2.5VspecifiedPowerTrenchMOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildsSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–10V). Features •4.5A,20V.RDS(ON)=32mW@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FTK9926

Advancedtrenchprocesstechnology

FS

First Silicon Co., Ltd

GAPM9926

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

未分类制造商

GAPM9926C

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

未分类制造商

GSS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GSS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GT9926NW

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

未分类制造商

GTC9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GTC9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GTS9926

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926providesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent

GTM

勤益投資控股股份有限公司

GTS9926E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9926Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *Lowdrivecurrent *Surfacemountpackage

GTM

勤益投資控股股份有限公司

H9926CS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features •RDS(on)=40mΩ@VGS=2.5V,ID=5.2A;RDS(on)=30mΩ@VGS=4.5V,ID=6A •HighDensit

HSMC

华昕

H9926CTS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features •RDS(on)=40mΩ@VGS=2.5V,ID=5.2A;RDS(on)=30mΩ@VGS=4.5V,ID=6A •HighDensit

HSMC

华昕

H9926S

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features •RDS(on)=40mΩ@VGS=2.5V,ID=5.2A;RDS(on)=30mΩ@VGS=4.5V,ID=6A •HighDensit

HSMC

华昕

H9926TS

DualN-ChannelEnhancement-ModeMOSFET(20V,6A)

Description ThisN-Channel2.5VspecifiedMOSFETisaruggedgateversionofadvancedtrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V-10V) Features •RDS(on)=40mΩ@VGS=2.5V,ID=5.2A;RDS(on)=30mΩ@VGS=4.5V,ID=6A •HighDensit

HSMC

华昕

HM9926B

DualN-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

供应商型号品牌批号封装库存备注价格
YJ
36118
SOP-8
2015
专业代理MOS管,型号齐全,公司优势产品
询价
由甲科技
SMD
SOT-8
57000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
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23+
N/A
54000
一级代理放心采购
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23+
N/A
54000
一级代理放心采购
询价
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Xinyangze(鑫扬泽)
21+
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35000
航宇科工半导体-央企合格优秀供方
询价
更多YZ9926供应商 更新时间2024-6-6 17:08:00