N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：325.1 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：363.27 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Capable of 2.5V gate drive * Low drive current

文件：334.32 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Capable of 2.5V gate drive * Low drive current * Surface mount package

文件：363.27 Kbytes 页数：4 Pages

GTM

勤益投资控股

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

文件：45.67 Kbytes 页数：4 Pages

HSMC

华昕