Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Densit

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HSMC

华昕

Low Voltage MOSFET

HSMC

华昕

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：351.47 Kbytes 页数：5 Pages

SAMHOP

三合微科

Dual N-Channel MOSFET

文件：1.043619 Mbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

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DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS

文件：109.4 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商