-30V P-Ch MOSFET

XNRUSEMI

新锐半导体

TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount componen

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MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM

HDTMOS E-FET Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recover

文件：131.72 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

OptiMOS-P Power - Transistor

Feature • P-Channel • Enhancement mode • Logic Level • High current rating • 175°C operating temperature • Avalanche rated • dv/dt rated

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INFINEON

英飞凌