60V N-Ch MOSFET

XNRUSEMI

新锐半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：578.9 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

文件：262.43 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

文件：207.72 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

文件：206.32 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体