实验室天平

托利多

梅特勒

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：66.24 Kbytes 页数：12 Pages

PHI

PHI

NPN SILICON RF POWER TRANSISTOR

文件：18.56 Kbytes 页数：1 Pages

ASI

25 Watts, 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid

Description The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances and includes bias circuitry with temperature compensation. This de

文件：420.34 Kbytes 页数：4 Pages

ERICSSON

爱立信