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XP6C036AM

N AND P-CHANNEL ENHANCEMENT

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件:282.57 Kbytes 页数:12 Pages

YAGEO

国巨

XP6C036AMT

N AND P-CHANNEL ENHANCEMENT

Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS Compliant & Halogen-Free Description XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer

文件:745.17 Kbytes 页数:12 Pages

YAGEO

国巨

XP6C036AM

Discrete Semiconductors

YAGEO

国巨

XP6C036AMT

Discrete Semiconductors

YAGEO

国巨

技术参数

  • 类别:

    XP6C036AM

  • TA=25°C时功耗 (W):

    2.4

  • 栅极阈值电压 (VGS(th)):

    3 V

  • 漏源电压 (Vds):

    60 VDS

  • 配置:

    Complementary

  • 技术:

    N-Channel

  • 栅源电压 (VGS):

    20 VGS

  • 类型:

    Discrete Semiconductors

  • 应用:

    MOSFET

  • 封装:

    SO-8(M)

  • 产品类别:

    MOSFET

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
PMPAK-5x6
986966
国产
询价
三年内
1983
只做原装正品
询价
更多XP6C036AM供应商 更新时间2026-4-17 17:49:00