PTB32003X中文资料飞利浦数据手册PDF规格书
PTB32003X规格书详情
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
产品属性
- 型号：
PTB32003X
- 制造商：
ASI
- 制造商全称：
ASI
- 功能描述：
NPN SILICON RF POWER TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
8000 |
原装现货,特价销售 |
询价 | |||
NEPHOTO |
24+ |
DIP |
35200 |
一级代理分销/放心采购 |
询价 | ||
NEOPHOTOI |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | |||
Infineon |
24+ |
SOP |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
TI |
25+ |
THROUGH-HO |
2 |
全新现货 |
询价 | ||
TI/TEXAS |
NEW |
DIPMODULE-10 |
8931 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
HEPHOTONICS |
23+ |
HEPHOTONICS |
6000 |
专业配单保证原装正品假一罚十 |
询价 | ||
ERICSSON/爱立信 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
NEPHOTO |
24+ |
SSOP |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
ERICSSON/爱立信 |
24+ |
299 |
现货供应 |
询价 |
