TC7SH08FE

2InputANDGate

Features •Superhighspeedoperation:tPD=4.3ns(typ.)@VCC=5V •Lowpowerdissipation:ICC=2µA(Max.)@Ta=25°C •Highnoiseimmunity:VNIH=VNIH=28VCC(Min.) •5.5Vtolerantinput. •Wideoperationvoltagerange:VCC(opr)=2~5.5V

TC7SH08FS

2-INPUTANDGATE

Features Highspeed:tpd=4.3ns(typ.)atVCC=5V Lowpowerdissipation:ICC=2µA(max)atTa=25°C Highnoiseimmunity:VNIH=VNIL=28VCC(min) 5.5Vtolerantinput. Wideoperatingvoltagerange:VCC(opr)=2~5.5V

TC7SH08FU

2-INPUTANDGATE

Features •Highspeedoperation:tpd=4.3ns(typ.)atVCC=5V,15pF •Lowpowerdissipation:ICC=2μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •5.5-Vtolerantinputs •Wideoperatingvoltagerange:VCC=2to5.5V

U7SH08

2-INPUTANDGATE

DESCRIPTION TheU7SH08isa2-inputANDgatewhichprovidestheFunctionY=A*B.Thisdevicehaspower-downprotectivecircuit,preventingdevicedestructionwhenitispowereddown. FEATURES *OperationVoltageRange:2~5.5V *LowPowerCurrent:ICC=2μA(Max) *HighSpeed:tPD=4.3n

XC7SH08

High-speedSi-gateCMOSdevice,2-inputANDfunction

XC7SH08

2-inputANDgate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

XC7SH08GV

2-inputANDgate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

XC7SH08GV

High-speedSi-gateCMOSdevice,2-inputANDfunction