2 Input AND Gate

Features • Super high speed operation :tPD = 4.3 ns (typ.)@VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.)@ Ta = 25°C • High noise immunity : VNIH = VNIH = 28 VCC (Min.) • 5.5V tolerant input. • Wide operation voltage range : VCC (opr) = 2~5.5 V

文件：152.48 Kbytes 页数：5 Pages

TOSHIBA

东芝

L-MOS VHS series

Function：Single 2-Input AND Gate\nFunction1：Gate\nFunction2：AND\nNumber of Circuits：1\nProtection Functions：Input overvoltage tolerance\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国

Toshiba

东芝

Package：SOT-553；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE AND 1CH 2-INP ESV

Toshiba Semiconductor and Storage

2-INPUT AND GATE

Features High speed: tpd = 4.3 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28 VCC (min) 5.5V tolerant input. Wide operating voltage range: VCC (opr) = 2~5.5 V

文件：172.51 Kbytes 页数：6 Pages

TOSHIBA

东芝

2-INPUT AND GATE

Features • High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28 VCC (min) • 5.5-V tolerant inputs • Wide operating voltage range : VCC = 2 to 5.5 V

文件：197.09 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-speed Si-gate CMOS device, 2-input AND function

文件：74.73 Kbytes 页数：11 Pages

PHI

PHI