XC7SH08GW

Marking：fE；Package：SOT353-1；2-input AND gate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

XC7SH08GW

High-speed Si-gate CMOS device, 2-input AND function

XC7SH08GW,125

Package：5-TSSOP，SC-70-5，SOT-353；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE AND 1CH 2-INP 5TSSOP

Nexperia USA Inc.

ELM7SH08MB-EL

HIGHSPEEDCMOSLOGICICELM7SH08xB2-inputANDgate

ELM7SH08TB-EL

HIGHSPEEDCMOSLOGICICELM7SH08xB2-inputANDgate

ELM7SH08XB

HIGHSPEEDCMOSLOGICIC2-inputANDgate

ELM7SH08XB

HIGHSPEEDCMOSLOGICIC

KIC7SH08FU

SILICONMONOLITHICCMOSDIGITALINTEGRATEDCIRCUIT(2-INPUTANDGATE)

TheKIC7S08FUisahighspeedC2MOS2-INPUTANDGATEfabricatedwithsilicongateC2MOStechnology. ItachieveshighspeedoperationsimilartoequivalentLSTTLwhilemaintainingtheC2MOSlowpowerdissipation.Theinternalcircuitiscomposedof2stagesincludingbufferoutput,whichenables

TC7SH08

2-INPUTANDGATE

Features •Highspeedoperation:tpd=4.3ns(typ.)atVCC=5V,15pF •Lowpowerdissipation:ICC=2μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •5.5-Vtolerantinputs •Wideoperatingvoltagerange:VCC=2to5.5V

TC7SH08F

2-INPUTANDGATE

Features •Highspeedoperation:tpd=4.3ns(typ.)atVCC=5V,15pF •Lowpowerdissipation:ICC=2μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •5.5-Vtolerantinputs •Wideoperatingvoltagerange:VCC=2to5.5V