丝印：X28；Package：EMT6；Low frequency transistor, complex (2-elements) Bipolar Transistor

Features 1) Two 2SD2696 dies are incorpolated in the EMT6 package. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA Applications General purpose small signal amplifier

文件：61.34 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：EMT6；Complex (2-elements) Bipolar Transistor

文件：198.49 Kbytes 页数：4 Pages

ROHM

罗姆

ELECTRICALLY ERASBLE PROM

ELECTRICALLY ERASBLE PROM

文件：212.54 Kbytes 页数：8 Pages

XICOR

Xicor Inc.

ELECTRICALLY ERASBLE PROM

ELECTRICALLY ERASBLE PROM

文件：212.54 Kbytes 页数：8 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The Xicor X2804C is a 512 x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2804C features the JEDEC approved pinout for byte-wide memories, compatible with in

文件：54.98 Kbytes 页数：13 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The Xicor X2804C is a 512 x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memories it is a 5V only device. The X2804C features the JEDEC approved pinout for byte-wide memories, compatible with in

文件：54.98 Kbytes 页数：13 Pages

XICOR

Xicor Inc.