丝印：X28；Package：EMT6；Low frequency transistor, complex (2-elements) Bipolar Transistor

Features 1) Two 2SD2696 dies are incorpolated in the EMT6 package. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA Applications General purpose small signal amplifier

文件：61.34 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : SOT-563 Package  Terminals : Solderable per

文件：362.16 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X28；Package：EMT6；Complex (2-elements) Bipolar Transistor

文件：198.49 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：X28C010D-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010D-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DI；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：X28C010DI-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨