ADP3413JR

DualBootstrappedMOSFETDriverwithOutputDisable

GENERALDESCRIPTION TheADP3413isadualMOSFETdriveroptimizedfordrivingtwoN-channelMOSFETswhicharethetwoswitchesinanonisolatedsynchronousbuckpowerconverter.Eachofthedriversiscapableofdrivinga3000pFloadwitha20nspropagationdelayanda30nstransitiontime.On

AIC3413

1.2MHzSynchronousStep-UpConverter

AM3413A

MOSFET-20VP-CHANNELENHANCEMENTMODE

DESCRIPTION VDS=-20V VGS=±12V ID(A)=-3.2A RDS(ON)=75mΩ(Typ.)@VGS=-4.5V RDS(ON)=105mΩ(Typ.)@VGS=-2.5V RDS(ON)=140mΩ(Typ.)@VGS=-1.8V TheAM3413AisavailableinSOT23Spackage. FEATURES ⚫Fastswitch ⚫1.8VLowgatedriveapplications ⚫AvailableinSOT23Spackage APPLICATIONS

AM3413P

P-Channel200-V(D-S)MOSFET

AN3413

STM32L1xcurrentconsumptionmeasurementandtouchsensingdemonstrationfirmware

AO3413

P-ChannelMOSFET

■Features ●VDS(V)=-20V ●ID=-3A(VGS=-4.5V) ●RDS(ON)

AO3413

20VP-ChannelMOSFET

AO3413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=-20V ID=-3A RDS(ON)

AO3413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=-20V ID=-3A RDS(ON)

AO3413A

20VP-ChannelMOSFET

Features VDS=-20V ID=-3A(VGS=-4.5V) RDS(ON)