STM32L1x current consumption measurement and touch sensing demonstration firmware

文件：325.04 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

文件：222.36 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

文件：958.67 Kbytes 页数：4 Pages

KERSEMI

20V P-Channel MOSFET

文件：462.36 Kbytes 页数：5 Pages

AOSMD

万国半导体