丝印：WNSC2M1K0170B7；Package：TO263-7L；N-Channel Silicon Carbide MOSFET

General description Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • Easy to parallel • 100% UIS Tested • C

文件：808.99 Kbytes 页数：14 Pages

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瑞能半导体

SIC MOSFET

• Low on-resistance\n• Fast switching speed\n• 0V turn-off gate voltage for simple gate drive\n• Easy to parallel\n• 100% UIS Tested\n• Controllable dV/dt for optimized EMI\n• Reduced cooling requirements\n• RoHS compliant;

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瑞能半导体

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DO-214AASM

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瑞能半导体

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