WMK20N65EM

N-Channel SJ-MOS EM;

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOS™ C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOS™ C2系列产品具有更好的性价比。

20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE •ProprietaryNewPlanarTechnology •RDS(ON),typ.typ.=0.38Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS •Adaptor •TVMainPower •SMPSPowerSupply •LCDPanel

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.