N-Channel SJ-MOS EM

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOS™ C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOS™ C2系列产品具有更好的性价比。

WAYON

维安

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

文件：133.81 Kbytes 页数：3 Pages

UTC

友顺

20A N-Channel Power MOSFET

Features ● RDS(ON) = 0.35Ω ● Ultra low gate charge ( Typical 150 nC ) ● Low reverse transfer capacitance ( CRSS = typical 36 pF ) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness Application ● Power factor correction（PFC） ● Switched m

文件：1.69493 Mbytes 页数：6 Pages

SY

顺烨电子

20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes 页数：6 Pages

YFWDIODE

佑风微