N-Channel SJ-MOS EM

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOS™ C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOS™ C2系列产品具有更好的性价比。

WAYON

维安

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：426.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：426.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：426.66 Kbytes 页数：5 Pages

CET-MOS

华瑞