首页 >WMM65P06TS>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
WMM65P06TS | 12V-100V Trench P Channel Power MOSFET | Wayon 维安 | Wayon | |
P-Channel Enhancement Mode Power MOSFET Description The G65P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：668.47 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
P-Channel Enhancement Mode Power MOSFET Description The G65P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：665.29 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
P-Channel Enhancement Mode Power MOSFET Description The G65P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：670.49 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD |
技术参数
- VDS(V)：
-60
- Vgs Max(V)：
±20
- ID(A)@TA=25℃(Max.)：
-72
- VGS(th)(V)(Typ.)：
-1.6
- Rds(on)(mΩ)@Vgs=10V(Max.)：
16
- Rds(on)(mΩ)@Vgs=4.5V(Max.)：
20
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WILLSEMI |
23+ |
LGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
WILLSEMI |
2023+ |
LGA |
30000 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
WLLSEMI |
2447 |
3.762.241.1 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
WLLSEMI |
23+ |
SMD送话器 |
50000 |
只做原装正品 |
询价 | ||
WLLSEMI |
2517+ |
SMD |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
WLLSEMI |
25+ |
SMD |
10000 |
全新原装现货库存 |
询价 | ||
WILLSEMI/韦尔 |
24+ |
LGA |
60000 |
全新原装现货 |
询价 | ||
WILLSEMI |
24+ |
58765 |
原装正品现货供应 |
询价 | |||
WILLSEMI |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WanTcom |
24+ |
放大器 |
3600 |
专注军工级宇航级器件长期排单订货 |
询价 |
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