WML14N65FD

Power MOSFET-SJ-MOS with Fast Body Diode;

采用先进的超结技术和优化的设计结构，相比传统的高压VDMOS，新一代Wayon WMOSTM C2 系列产品具有极低的特征导通电阻。C2系列的FOM (RDS(on)*Qg)较C1系列降低38%，有助于提升开关电源的效率及功率密度。相比传统VDMOS，500V-900V WMOSTM C2系列产品具有更好的性价比。

14N65KG

N-CHANNELPOWERMOSFET

14N65KL

N-CHANNELPOWERMOSFET

14N65K-MT

N-CHANNELPOWERMOSFET

14N65-TC

14A,650VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.7Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

AM14N65P

N-Channel650-V(D-S)MOSFET

FIR14N65FG

N-CHANNELPOWERMOSFET-S

P14N65FJD

14A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’sDPMOStechnology. Itachieveslowconductionlossandswitchinglosses.Itleadsthe designengineerstotheirpowerconverterswithhighefficiency,high powerdensity,andsuper

SIHH14N65E

ESeriesPowerMOSFET

SIHH14N65EF

ESeriesPowerMOSFETwithFastBodyDiode