WM10N20M规格书行情报价仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
10N20	文件：1.6556 Mbytes Page：7 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
10N20C	文件：875.37 Kbytes Page：10 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
EC-10N20	文件：227.54 Kbytes Page：3 Pages	HIGHPOWER125WHIGHQUALITYAUDIOAMPLIFIERAPPLICATIONS [EXICON] NANDPCHANNELLAERALMOSFETS	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
ECX10N20	文件：400.4 Kbytes Page：4 Pages	NCHANNELLATERALMOSFET	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
FDD10N20LZ	文件：615.61 Kbytes Page：8 Pages	UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD10N20LZ	文件：358.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD10N20LZTM	文件：615.61 Kbytes Page：8 Pages	UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FLX10N20	文件：109.45 Kbytes Page：2 Pages	HighVoltagePowerSupplies	TDKTDK Corporation 东电化（中国）投资有限公司	TDK
FQ10N20	文件：788.66 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB10N20	文件：794.12 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB10N20C	文件：608.81 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB10N20C	文件：333.71 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB10N20L	文件：333.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB10N20L	文件：574.04 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD10N20	文件：787.25 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD10N20	文件：576.23 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD10N20	文件：305.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD10N20C	文件：347.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD10N20C	文件：549.66 Kbytes Page：9 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD10N20C	文件：1.28335 Mbytes Page：9 Pages	N-ChannelQFETMOSFET200V,7.8A,360mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	WM10N20M	CYGWAYON	2425+	SOT-23.贴片	96500	包邮,有问必回,专注现货,Q.微.恭候,备货HK仓	询价
贸泽芯城（深圳）电子科技有限公司	WM10N20M	WAY-ON		SOT-23	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
北京京北通宇电子元件有限公司	WM10N20M	WAYON	23+	NA	500	MOSFET	询价
深圳市润联芯城科技有限公司	WM10N20M	WAY-ON	23+	SOT-23	50000	原装正品支持实单	询价
上海金庆电子技术有限公司	WM-1-10	BRADY	新		62	全新原装货期两周	询价
深圳市百视威讯电子科技有限公司	WM11008DKR-ND		23+	N/A	85900	正品授权货源可靠	询价
深圳市威尔健半导体有限公司	WM11008DKR-ND	MOLEX/莫仕	23+	NA	50000	全新原装正品现货,支持订货	询价
深圳市盈盛科创科技有限公司	WM11008DKR-ND	MOLEX	22+	NA	3000	全新原装正品现货假一罚十	询价
深圳廊盛科技有限公司	WM11008DKR-ND	MOLEX/莫仕	22+	NA	50000	只做原装正品,假一罚十,欢迎咨询	询价
深圳市得捷芯城科技有限公司	WM11008DKR-ND	MOLEX/莫仕	23+	NA/	3650	原装现货,当天可交货,原型号开票	询价

更多WM10N20M供应商更新时间2024-5-1 16:16:00

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