10N20资料datasheet下载供应代理微碧半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
10N20	文件：1.6556 Mbytes Page：7 Pages	N-Channel 200 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司
10N20C	文件：875.37 Kbytes Page：10 Pages	200V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
EC-10N20	文件：227.54 Kbytes Page：3 Pages	HIGHPOWER125WHIGHQUALITYAUDIOAMPLIFIERAPPLICATIONS [EXICON] NANDPCHANNELLAERALMOSFETS	ETC1List of Unclassifed Manufacturers 未分类制造商
ECX10N20	文件：400.4 Kbytes Page：4 Pages	NCHANNELLATERALMOSFET	ETC1List of Unclassifed Manufacturers 未分类制造商
FDD10N20LZ	文件：615.61 Kbytes Page：8 Pages	UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FDD10N20LZ	文件：358.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FDD10N20LZTM	文件：615.61 Kbytes Page：8 Pages	UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FLX10N20	文件：109.45 Kbytes Page：2 Pages	HighVoltagePowerSupplies	TDKTDK Corporation 东电化（中国）投资有限公司
FQ10N20	文件：788.66 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB10N20	文件：794.12 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB10N20C	文件：608.81 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB10N20C	文件：333.71 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQB10N20L	文件：333.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQB10N20L	文件：574.04 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD10N20	文件：787.25 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD10N20	文件：576.23 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD10N20	文件：305.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD10N20C	文件：347.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD10N20C	文件：729.18 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD10N20C	文件：549.66 Kbytes Page：9 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	10N20		23+	N/A	90050	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	10N20	FAIRCHILB	1846+	TO-220	5000	原装现货!随时可以看货!一片起卖!	询价
深圳兆威电子有限公司	10N20	VB	2019	TO-220F	55000	绝对原装正品假一罚十!	询价
深圳市河锋鑫科技有限公司	10N20	A	22+	TO-252	6000	十年配单,只做原装	询价
深圳市汇莱威科技有限公司	10N20		VB	TO-220F	608900	原包原标签100%进口原装常备现货!	询价
贸泽芯城（深圳）电子科技有限公司	10N20	FAIRCHILD/仙童	2021+	TO-220	22570	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市共奕科技有限公司	10N20	Rongtai(容泰半导体)	1年内	TO-220C	1784	容泰经销商共奕芯城一站式电子元器采购平台支持自助	询价
深圳市创新迹电子有限公司	10N20	A	23+	TO-252	8400	专注配单,只做原装进口现货	询价
深圳市九方航科技有限公司	10N20	VBSEMI	19+	TO-220F	29600	绝对原装现货,价格优势!	询价
深圳市安富世纪电子有限公司	10N20	A	23+	TO-252	8400	专注配单,只做原装进口现货	询价

更多10N20供应商更新时间2024-4-26 11:36:00

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