零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
EC-10N20 | HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS [EXICON] NANDPCHANNELLAERALMOSFETS | ETC1List of Unclassifed Manufacturers 未分类制造商 | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NCHANNELLATERALMOSFET | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HighVoltagePowerSupplies | TDKTDK Corporation 东电化(中国)投资有限公司 | |||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelQFETMOSFET200V,7.8A,360mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
详细参数
- 型号:
EC-10N20
- 功能描述:
HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
16+ |
1WR |
10000 |
进口原装现货/价格优势! |
询价 | |||
Nihon |
2008++ |
DO-214 |
6200 |
新进库存/原装 |
询价 | ||
17+ |
1WR |
6200 |
100%原装正品现货 |
询价 | |||
NIHON |
23+ |
1WR |
48388 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
22+ |
1WR |
25000 |
只有原装原装,支持BOM配单 |
询价 | |||
NIEC |
SMA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
NIEC |
23+ |
SMA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NIEC |
22+21+ |
SMA |
20000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
NIEC |
22+ |
SMA |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
NIEC |
23+ |
NA/ |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
相关规格书
更多- EC-10P16
- EC10PU2
- EC10QS04
- EC10QS06
- EC10QS10
- EC11.0001.001
- EC11.0001.002
- EC11.0001.201.21
- EC11.0001.206
- EC11.0001.301.21
- EC11.0001.401
- EC11.0021.001
- EC11.0021.002
- EC11.0021.201.21
- EC11.0021.301
- EC11.0021.302
- EC11.0021.402
- EC11.0031.001.21
- EC11.0031.201
- EC11.0031.202
- EC11.0031.301.21
- EC11.0031.401
- EC-1-1/2
- EC1100-000
- EC1100-10.752M
- EC110011.2896MHZ
- EC1100-14.7456M
- EC1100-60.000M-CL
- EC1100-60000M
- EC1100-60000M-CL
- EC1100-60000M-G
- EC1100-66.000MHZ
- EC1100ET-16.000M
- EC1100ET-60.000M
- EC1100ET-60.000M-CL
- EC1100ET-60.000M-G
- EC1100ET-60000M-CL
- EC1100ETT-60.000M
- EC1100ETT-60.000M-G
- EC1100ETT-60000M-CL
- EC1100ETTS-60.000M
- EC1100ETTS-60.000M-G
- EC1100ETTS-60000M-CL
- EC1100ETTS-60000M-G
- EC1100ETTTS-60.000M
相关库存
更多- EC-10P20
- EC10QS03L
- EC10QS04-TE12L
- EC10QS09
- EC11
- EC11.0001.001.21
- EC11.0001.201
- EC11.0001.202
- EC11.0001.301
- EC11.0001.302
- EC11.0001.402
- EC11.0021.001.21
- EC11.0021.201
- EC11.0021.202
- EC11.0021.301.21
- EC11.0021.401
- EC11.0031.001
- EC11.0031.002
- EC11.0031.201.21
- EC11.0031.301
- EC11.0031.302
- EC11.0031.402
- EC-1-1/4
- EC1100-1.5440M
- EC110011.0592M
- EC1100-12.000MHZ
- EC110016.000MHZ
- EC1100-60.000M-G
- EC1100-60000M
- EC1100-60000M-CL
- EC1100-60000M-G
- EC1100-8.192M
- EC1100ET-60.000M
- EC1100ET-60.000M-CL
- EC1100ET-60.000M-G
- EC1100ET-60000M
- EC1100ET-60000M-G
- EC1100ETT-60.000M-CL
- EC1100ETT-60000M
- EC1100ETT-60000M-G
- EC1100ETTS-60.000M-CL
- EC1100ETTS-60000M
- EC1100ETTS-60000M-G
- EC1100ETTTS-60.000M
- EC1100ETTTS-60.000M-CL