首页 >EC-10N20>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

EC-10N20

HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

[EXICON] NANDPCHANNELLAERALMOSFETS

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

10N20

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

10N20C

200VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

ECX10N20

NCHANNELLATERALMOSFET

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

FDD10N20LZ

UninterruptiblePowerSupply

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD10N20LZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDD10N20LZTM

UninterruptiblePowerSupply

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FLX10N20

HighVoltagePowerSupplies

TDKTDK Corporation

东电化(中国)投资有限公司

TDK

FQ10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB10N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB10N20C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQB10N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQB10N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD10N20

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD10N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQD10N20C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQD10N20C

N-ChannelQFETMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD10N20C

N-ChannelQFETMOSFET200V,7.8A,360mOhm

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

详细参数

  • 型号:

    EC-10N20

  • 功能描述:

    HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

供应商型号品牌批号封装库存备注价格
16+
1WR
10000
进口原装现货/价格优势!
询价
Nihon
2008++
DO-214
6200
新进库存/原装
询价
17+
1WR
6200
100%原装正品现货
询价
NIHON
23+
1WR
48388
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
22+
1WR
25000
只有原装原装,支持BOM配单
询价
NIEC
SMA
265209
假一罚十原包原标签常备现货!
询价
NIEC
23+
SMA
50000
全新原装正品现货,支持订货
询价
NIEC
22+21+
SMA
20000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
NIEC
22+
SMA
12800
本公司只做进口原装!优势低价出售!
询价
NIEC
23+
NA/
20000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多EC-10N20供应商 更新时间2024-4-26 15:14:00