CED3070

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9.5mΩ@VGS=10V. RDS(ON)=13.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP3070

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,72A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU3070

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9.5mΩ@VGS=10V. RDS(ON)=13.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CXA3070

LEDarrayexpandsCreesfamilyofhighflux,multidieintegratedarrays

CXB3070

XLampLED

CXB3070

XLamp®CXB3070LED

FEATURES •23‑mmopticalsource •Mechanicalandopticaldesign consistentwithotherCXA30and CXB30LEDs •Availablein70-,80-and90-minimum CRIoptions •EasyWhite®2-,3‑and5-stepbinning •Forwardvoltageoption:36‑Vclass •85°Cbinningandcharacterization •Extremelyunifo

DMF3070

SiliconBeam-LeadandChipSchottkyBarrierMixerDiodes

DMN3070SSN

LowOn-Resistance

DS3070W

3.3VSingle-Piece16MbNonvolatileSRAMwithClock

EE-SX3070

Photomicrosensor(Transmissive)