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WAB

6 AMPERE AXIAL LEAD RECTIFIERS HIGH PERFORMANCE

文件:69.11 Kbytes 页数:2 Pages

edi

PDTA115ET

丝印:WAB;Package:SOT-23;PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件:93.83 Kbytes 页数:14 Pages

PHI

飞利浦

PHI

BAW101

丝印:WAB;Package:SOT-143B;High voltage double diode

文件:136.13 Kbytes 页数:9 Pages

PHI

飞利浦

PHI

PDTA115ET

丝印:WAB;Package:SOT-23;Low VCEsat (BISS) transistors

文件:948.33 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

WAB300M12BM3

1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.2 nH) Design • Silicon Nitride Insulator and Copper

文件:1.79893 Mbytes 页数:12 Pages

WOLFSPEED

WAB400M12BM3

1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.2 nH) Design • Silicon Nitride Insulator and Copper

文件:1.315 Mbytes 页数:12 Pages

WOLFSPEED

WAB400M12BM3

All-SiC Power Module

FEATURES ·VDS=1200V,ID= 400A ·Zero Reverse Recovery Current from Diode ·Zero Turn-Off Tail Current from MOSFET ·High-Frequency Operation ·Ease of Paralleling ·Ultra Low Loss APPLICATIONS ·Solar and Wind Inverters ·Industrial Automation & Testing ·Induction Heating ·EV Chargers

文件:657.66 Kbytes 页数:7 Pages

ISC

无锡固电

WAB005

6 AMPERE AXIAL LEAD RECTIFIERS HIGH PERFORMANCE

文件:69.11 Kbytes 页数:2 Pages

edi

WAB010

6 AMPERE AXIAL LEAD RECTIFIERS HIGH PERFORMANCE

文件:69.11 Kbytes 页数:2 Pages

edi

WAB020

6 AMPERE AXIAL LEAD RECTIFIERS HIGH PERFORMANCE

文件:69.11 Kbytes 页数:2 Pages

edi

技术参数

  • Package:

    62mm

  • Configuration:

    Half-Bridge

  • Blocking Voltage:

    1200 V

  • Current Rating:

    300 A

  • RDS(ON) at 25°C:

    4 mΩ

  • Generation:

    Gen 3 MOS

  • Maximum junction temperature:

    175 °C

  • Module Size:

    105 x 62 x 31 mm

  • Recommended for New Design?:

    Yes

供应商型号品牌批号封装库存备注价格
PHI
24+
SOP
3700
询价
25+
TO-263-5
18000
原厂直接发货进口原装
询价
PHI
25+
SOP20W
3629
原装优势!房间现货!欢迎来电!
询价
ON/安森美
18+
SOP16
12500
全新原装正品,本司专业配单,大单小单都配
询价
GainSpan
1935+
N/A
55
加我qq或微信,了解更多详细信息,体验一站式购物
询价
PHI
2447
SOP20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FUTURE
25+
射频元件
155
就找我吧!--邀您体验愉快问购元件!
询价
GainSpan
22+
NA
55
加我QQ或微信咨询更多详细信息,
询价
MONRSUN
22+
SMD
6000
十年配单,只做原装
询价
PHI
23+
SOP7.2
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多WAB供应商 更新时间2025-12-24 16:01:00