1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.2 nH) Design • Silicon Nitride Insulator and Copper

文件：1.79893 Mbytes 页数：12 Pages

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

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