All-SiC Power Module

FEATURES ·VDS=1200V,ID= 400A ·Zero Reverse Recovery Current from Diode ·Zero Turn-Off Tail Current from MOSFET ·High-Frequency Operation ·Ease of Paralleling ·Ultra Low Loss APPLICATIONS ·Solar and Wind Inverters ·Industrial Automation & Testing ·Induction Heating ·EV Chargers

文件：657.66 Kbytes 页数：7 Pages

ISC

无锡固电

1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module

Technical Features • Industry Standard 62mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • High Junction Temperature (175 °C) Operation • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.2 nH) Design • Silicon Nitride Insulator and Copper

文件：1.315 Mbytes 页数：12 Pages

WOLFSPEED

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form FactorStrong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment ApplicationsLow-Inductance Design (10 – 15 nH) for Fast Switching with Low Power LossesMOSFET Die and • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor\n• Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications\n• Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses\n• ;

Wolfspeed(CREE)