高压MOSFET

Jingdao

晶导

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.9827 Mbytes 页数：16 Pages

INFINEON

英飞凌

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes 页数：15 Pages

DIODES

美台半导体

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

文件：1.32748 Mbytes 页数：10 Pages

BOURNS

伯恩斯