ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs

文件：2.29309 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体

N-channel 200V - 0.065廓 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Features ■ Gate charge min

文件：390.37 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

文件：392.22 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：399.7 Kbytes 页数：2 Pages

ISC

无锡固电