丝印：W04；Package：SOT-343R；MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features - Easy Gate 1 switch-off with PNP switching transistors inside PLL - High AGC-range - Integrated gate protection diodes - Low noise figure - High gain - Improved cross modulation at gain reduction - SMD package Applications Low noise gain controlled input stag

文件：99.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

丝印：W045Z120C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 45 mΩ (typ.) (5) Less susceptible t

文件：637.1 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：W048U65C；Package：TOLL；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.) (5) Less susceptible to

文件：896.51 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：W048Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.) (5) Less susceptible to

文件：635.39 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：MDDW04；Package：WOM；SILICON BRIDGE RECTIFIERS

文件：608.94 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SILICON BRIDGE RECTIFIERS

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Ideal for printed circuit boards Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tensio

文件：405.57 Kbytes 页数：2 Pages

SY

顺烨电子

BRIDGE RECTIFIER

REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 1.0 Ampere FEATURES Glass passivated chip junction Ideal for surface mounted applications Low leakage High forward surge current capability High temperature soldering guaranteed: 260℃/10 seconds at terminals

文件：216.41 Kbytes 页数：18 Pages

KINGTRONICS

京创国际

SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5A Features ● Glass passivated chip ● High case dielectric strength ● High surge current capability ● High reliability ● Low reverse current ● Low forward voltage drop ● Ideal for printed circuit board

文件：260.06 Kbytes 页数：2 Pages

SUNMATE

森美特

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 1.5 Amperes FEATURES ●Surge overload rating -50 amperes peak ●Ideal for printed circuit board ●Reliable low cost construction utilizong molded plastic technique results in expensive product ●Mounting position :Any

文件：46.66 Kbytes 页数：2 Pages

HY

虹扬科技

SINGLE PHASE 1.0 AMPS. SILICON BRIDGE RECTIFIERS

文件：244.16 Kbytes 页数：2 Pages

YANGJIE

扬杰电子