TW048Z65C中文资料东芝数据手册PDF规格书

Applications

• Switching Voltage Regulators

特性 Features

(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)

(2) Low diode forward voltage: VDSF = -1.35 V (typ.)

(3) High voltage: VDSS = 650 V

(4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.)

(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1.6 mA)

(6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V

(7) Enhancement mode.