首页>VNV35N07-E>规格书详情

VNV35N07-E数据手册集成电路(IC)的配电开关负载驱动器规格书PDF

PDF无图
厂商型号

VNV35N07-E

参数属性

VNV35N07-E 封装/外壳为PowerSO-10 裸露底部焊盘;包装为卷带(TR);类别为集成电路(IC)的配电开关负载驱动器;产品描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

功能描述

OMNIFET II全自动保护功率MOSFET
IC PWR DRIVER N-CHAN 1:1 PWRSO10

封装外壳

PowerSO-10 裸露底部焊盘

制造商

ST STMicroelectronics

中文名称

意法半导体 意法半导体集团

数据手册

原厂下载下载地址下载地址二

更新时间

2025-8-7 23:00:00

人工找货

VNV35N07-E价格和库存,欢迎联系客服免费人工找货

VNV35N07-E规格书详情

描述 Description

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower®technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

特性 Features

• Automotive qualified
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power MOSFET (analog driving)
• Compatible with standard Power MOSFET
• Standard TO-220 package
• Compliant with 2002/95/EC European directive

技术参数

更多
  • 制造商编号

    :VNV35N07-E

  • 生产厂家

    :ST

  • Technology

    :M0-3

  • RDS(on)_typ(mΩ)

    :28

  • General Description

    :OMNIFET II fully autoprotected Power MOSFET

  • Marketing Status

    :Active

  • Package

    :PowerSO-10

  • RoHS Compliance Grade

    :Ecopack1

  • Clamp Voltage_typ(V)

    :70

  • Drain Current Limit_typ(A)

    :35

供应商 型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
PowerSO-10
5098
百分百原装正品,可原型号开票
询价
ST/意法半导体
23+
PowerSO-10
12700
买原装认准中赛美
询价
ST/意法
25+
原厂原封可拆
54685
百分百原装现货有单来谈
询价
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
ST/意法半导体
24+
PowerSO-10
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
23+
N/A
20000
询价
ST/意法半导体
21+
PowerSO-10
8860
原装现货,实单价优
询价
ST/意法半导体
24+
PowerSO-10
16960
原装正品现货支持实单
询价
意法半导体
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
ST/意法半导体
21+
PowerSO-10
8860
只做原装,质量保证
询价