OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

文件：464.56 Kbytes 页数：24 Pages

STMICROELECTRONICS

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OMNIFET II全自动保护功率MOSFET

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower®technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.\n\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in hars • Automotive qualified \n• Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible;

ST

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Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

文件：464.56 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体